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this is information on a product in full production. june 2013 docid17206 rev 3 1/14 STU3N45K3 n-channel 450 v - 3.3 typ., 1.8 a zener-protected supermesh3? power mosfet in a ipak package datasheet - production data figure 1. internal schematic diagram features ? 100% avalanche tested ? extremely high dv/dt capability ? gate charge minimized ? very low intrinsic capacitance ? improved diode reverse recovery characteristics ? zener protected applications ? switching applications description this supermesh3? power mosfet is the result of improvements applied to stmicroelectronics? supermesh? technology, combined with a new optimized vertical structure. this device boasts an extremely low on- resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications. d(2, tab) g(1) s(3) am01476v1 ipak 3 2 1 tab order code v dss r ds(on) max i d p w STU3N45K3 450 v < 4 1.8 a 27 w table 1.device summary order code marking package packaging STU3N45K3 3n45k3 ipak tube www.st.com
contents STU3N45K3 2/14 docid17206 rev 3 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
docid17206 rev 3 3/14 STU3N45K3 electrical ratings 14 1 electrical ratings table 2.absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 450 v v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25 c 1.8 a i d drain current (continuous) at t c = 100 c 1 a i dm (1) 1. pulse width limited by safe operating area. drain current (pulsed) 7.2 a p tot total dissipation at t c = 25 c 27 w i ar (2) 2. pulse width limited by tj max. avalanche current, repetitive or not-repetitive 0.9 a e as (3) 3. starting tj = 25 c, i d = i ar , v dd = 50 v. single pulse avalanche energy 60 mj dv/dt (4) 4. i sd 1.8 a, di/dt 400 a/s, v ds peak v (br)dss , v dd = 80% v (br)dss. peak diode recovery voltage slope 12 v/ns vesd(g-s) g-s esd (hbm c = 100 pf, r = 1.5 k )1000v t stg storage temperature -55 to 150 c table 3.thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 4.63 c/w r thj-amb thermal resistance junction-ambient max 100 c/w t l maximum lead temperature for soldering purpose 300 c
electrical characteristics STU3N45K3 4/14 docid17206 rev 3 2 electrical characteristics (t c = 25 c unless otherwise specified) table 4.on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 450 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, t c =125 c 1 50 a a i gss gate-body leakage current (v ds = 0) v gs = 20 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 50 a 3 3.75 4.5 v r ds(on static drain-source on resistance v gs = 10 v, i d = 0.6 a 3.3 4 table 5.dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 50 v, f = 1 mhz, v gs = 0 -164-pf c oss output capacitance - 17 - pf c rss reverse transfer capacitance -3-pf c o(tr) (1) 1. c oss eq. time related is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent capacitance time related v ds = 0 to 360 v, v gs = 0 -13-pf c o(er) (2) 2. c oss eq. energy related is defined as a constant equival ent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent capacitance energy related -18-pf r g intrinsic gate resistance f = 1 mhz open drain - 8 - q g total gate charge v dd = 360 v, i d = 1.8 a, v gs = 10 v (see figure 16 ) -9.5-nc q gs gate-source charge - 2 - nc q gd gate-drain charge - 6 - nc
docid17206 rev 3 5/14 STU3N45K3 electrical characteristics 14 the built-in back-to-back zener diodes have been specifically designed to enhance not only the device?s esd capability, but also to make them capable of safely absorbing any voltage transients that may occasionally be applied from gate to source. in this respect, the zener voltage is appropriate to achieve efficient and cost-effective protection of device integrity. the integrated zener diodes thus eliminate the need for external components. table 6.switching times symbol parameter test conditions min. typ. max unit t d(on) turn-on delay time v dd = 225 v, i d = 0.9 a, r g = 4.7 , v gs = 10 v (see figure 15 ) -6.5-ns t r rise time - 5.4 - ns t d(off) turn-off-delay time - 17 - ns t f fall time - 22 - ns table 7.source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 0.6 a i sdm (1) 1. pulse width limited by safe operating area. source-drain current (pulsed) - 2.4 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5%. forward on voltage i sd = 0.6 a, v gs = 0 - 1.5 v t rr reverse recovery time i sd = 1.8 a, di/dt = 100 a/s v dd = 60 v (see figure 20 ) -175 ns q rr reverse recovery charge - 550 nc i rrm reverse recovery current - 6 a t rr reverse recovery time i sd = 1.8 a, di/dt = 100 a/s v dd = 60 v, t j = 150 c (see figure 20 ) -185 ns q rr reverse recovery charge - 600 nc i rrm reverse recovery current - 6.5 a table 8.gate-source zener diode symbol parameter test conditions min typ max unit v (br)gso gate-source breakdown voltage i gs = 1 ma, i d =0 30 - - v
electrical characteristics STU3N45K3 6/14 docid17206 rev 3 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. gate charge vs gate-source voltage figure 7. static drain-source on resistance i d 1 0.1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms tj=150c tc=25c single pulse 0.01 10 am09206v1 i d 1.5 1.0 0.5 0 0 10 v ds (v) 20 (a) 5 15 25 2.0 5v 6v 7v v gs =10v 3.0 2.5 3.5 am09207v1 i d 1.5 1.0 0.5 0 0 4 v gs (v) 8 (a) 2 6 2.0 2.5 1 3 5 7 9 v ds =15v am09208v1 v gs 6 4 2 0 0 2 q g (nc) (v) 8 8 4 6 10 v dd =360v i d =1.8a 10 12 300 250 200 0 350 v ds 150 100 50 am09209v1 r ds(on) 3.2 3.0 2.8 2.6 0.2 0.6 i d (a) ( ) 0.4 0.8 3.4 3.6 3.8 4.0 v gs =10v 4.2 1.2 1.0 1.4 1.6 1.8 am09210v1
docid17206 rev 3 7/14 STU3N45K3 electrical characteristics 14 figure 8. capacitance variations figure 9. output capacitance stored energy figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on-resistance vs temperature figure 12. source-drain diode forward characteristics figure 13. normalized b vdss vs temperature c 100 10 1 0.1 10 v ds (v) (pf) 1 100 ciss coss crss am10296v1 e oss 0.3 0.2 0.1 0 0 100 v ds (v) (j) 400 0.4 200 300 0.5 0.6 0.7 0.8 am10297v1 v gs(th) 1.00 0.90 0.80 0.70 -75 t j (c) (norm) -25 1.10 75 25 125 i d =50a am10298v1 r ds(on) 2.0 1.5 1.0 0.5 -75 t j (c) (norm) -25 75 25 125 2.5 0.0 i d =1.2a am10299v1 v sd 0 0.4 i sd (a) (v) 1.6 0.8 1.2 0.4 0.5 0.6 0.7 0.8 0.9 1.0 t j =25c t j =150c t j =-50c am10301v1 bv dss -75 t j (c) (norm) -25 75 25 125 0.90 0.95 1.00 1.05 1.10 i d =1ma am10300v1
electrical characteristics STU3N45K3 8/14 docid17206 rev 3 figure 14. maximum avalanche energy vs starting tj e as 0 40 t j (c) (mj) 20 100 60 80 0 10 20 30 40 120 140 50 i d =1.8 a v dd =50 v 60 am10303v1
docid17206 rev 3 9/14 STU3N45K3 test circuits 14 3 test circuits figure 15. switching times test circuit for resistive load figure 16. gate charge test circuit figure 17. test circuit for inductive load switching and diode recovery times figure 18. unclamped inductive load test circuit figure 19. unclamped inductive waveform figure 20. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)dss v dd v dd v d i dm i d am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
package mechanical data STU3N45K3 10/14 docid17206 rev 3 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
docid17206 rev 3 11/14 STU3N45K3 package mechanical data 14 table 9. ipak (to-251) mechanical data dim mm. min. typ. max. a 2.20 2.40 a1 0.90 1.10 b 0.64 0.90 b2 0.95 b4 5.20 5.40 b5 0.30 c 0.45 0.60 c2 0.48 0.60 d 6.00 6.20 e 6.40 6.60 e 2.28 e1 4.40 4.60 h 16.10 l 9.00 9.40 l1 0.80 1.20 l2 0.80 1.00 v1 10
package mechanical data STU3N45K3 12/14 docid17206 rev 3 figure 21. ipak (to-251) drawing 0068771_k
docid17206 rev 3 13/14 STU3N45K3 revision history 14 5 revision history table 10.document revision history date revision changes 02-mar-2010 1 first release. 23-apr-2010 2 changed root part number. 24-jun-2013 3 ? part numbers stn3n45k3 and stq3n45k3-ap have been moved to two separate datasheets ? modified: description and figure 1 in cover page ? modified: vesd(g-s) value ? updated: section 4: package mechanical data
STU3N45K3 14/14 docid17206 rev 3 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not authorized for use in weapons. nor are st products designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2013 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

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